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| LC Mini TOPLED(R) RG Low Current LED LS M779, LY M779, LG M779 Besondere Merkmale q q q q q Gehausefarbe: wei als optischer Indikator einsetzbar zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung fur alle SMT-Bestuck- und Lottechniken geeignet gegurtet (12-mm-Filmgurt) VPL06926 Features q q q q q color of package: white for use as optical indicator for backlighting, optical coupling into light pipes and lenses suitable for all SMT assembly and soldering methods available taped on reel (12 mm tape) Typ Type Emissions- Farbe der farbe Lichtaustrittsflache Color of Color of the Emission Light Emitting Area super-red yellow green colorless clear colorless clear colorless clear Lichtstarke Lichtstrom Bestellnummer Luminous Intensity IF = 2 mA IV(mcd) 0.25 ... 0.5 0.40 ... 0.8 0.25 ... 0.5 0.40 ... 0.8 Luminous Flux IF = 2 mA V (mlm) 3.0 typ. 3.0 typ. Ordering Code LS M779-CF LS M779-DG LY M779-CF LY M779-DG LG M779-CO Q62703-Q3740 Q62703-Q3744 Q62703-Q3945 Q62703-Q3946 Q62703-Q3050 0.25 (1.0 typ.) 3.0 typ. Streuung der Lichtstarke in einer Verpackungseinheit IV max / IV min 2.0. Luminous intensity ratio in one packaging unit IV max / IV min 2.0. Semiconductor Group 1 11.96 LS M779, LY M779, LG M779 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom Forward current Stostrom Surge current t 10 s, D = 0.005 Sperrspannung Reverse voltage Verlustleistung Power dissipation Symbol Symbol Werte Values - 55 ... + 100 - 55 ... + 100 + 100 7.5 0.15 Einheit Unit C C C mA A Top Tstg Tj IF IFM VR Ptot 5 20 530 V mW K/W Rth JA Warmewiderstand Thermal resistance Sperrschicht / Umgebung Junction / air Montage auf PC-Board*) (Padgroe 16 mm 2) mounted on PC board*) (pad size 16 mm 2) *) PC-board: FR4 Semiconductor Group 2 LS M779, LY M779, LG M779 Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange des emittierten Lichtes Wavelength at peak emission IF = 7.5 mA Dominantwellenlange Dominant wavelength IF = 7.5 mA Symbol Symbol LS (typ.) peak (typ.) (typ.) dom (typ.) 635 Werte Values LY 586 LG 565 nm Einheit Unit 628 590 570 nm Spektrale Bandbreite bei 50 % Irel max (typ.) Spectral bandwidth at 50 % Irel max (typ.) IF = 7.5 mA Abstrahlwinkel bei 50 % IV (Vollwinkel) Viewing angle at 50 % IV Durchlaspannung Forward voltage IF = 2 mA Sperrstrom Reverse current VR = 5 V Kapazitat Capacitance VR = 0 V, f = 1 MHz Schaltzeiten: Switching times: IV from 10 % to 90 % IV from 90 % to 10 % IF = 100 mA, tp = 10 s, RL = 50 2 45 45 25 nm 120 1.8 2.6 0.01 10 3 120 2.0 2.7 0.01 10 3 120 1.9 2.6 0.01 10 15 Grad deg. V V A A pF (typ.) VF (max.) VF (typ.) IR (max.) IR (typ.) C0 (typ.) tr (typ.) tf 200 150 200 150 450 200 ns ns Semiconductor Group 3 LS M779, LY M779, LG M779 Relative spektrale Emission Irel = f (), TA = 25 C, IF = 7.5 mA Relative spectral emission V () = spektrale Augenempfindlichkeit Standard eye response curve Abstrahlcharakteristik Irel = f () Radiation characteristic Semiconductor Group 4 LS M779, LY M779, LG M779 Durchlastrom IF = f (VF) Forward current TA = 25 C Relative Lichtstarke IV / IV(2 mA) = f (IF) Relative luminous intensity TA = 25 C Zulassige Impulsbelastbarkeit IF = f (tp) Permissible pulse handling capability Duty cycle D = parameter, TA = 25 C Maximal zulassiger Durchlastrom IF = f (TA) Max. permissible forward current Semiconductor Group 5 LS M779, LY M779, LG M779 Wellenlange der Stahlung peak = f (TA) Wavelength at peak emission IF = 7.5 mA Dominantwellenlange dom = f (TA) Dominant wavelength IF = 7.5 mA Durchlaspannung VF = f (TA) Forward voltage IF = 2 mA Relative Lichtstarke IV / IV(25 C) = f (TA) Relative luminous intensity IF = 2 mA Semiconductor Group 6 LS M779, LY M779, LG M779 Mazeichnung Package Outlines (Mae in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) Kathodenkennung: Cathode mark: abgeschragte Ecke bevelled edge Semiconductor Group 7 GPL06926 |
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